Hybrid 2D/CMOS microchips for memristive applications
Quan: 24 d'octubre a les 15 h
Room C6-E106, entrada sud (davant FIB B6) del Campus Nord UPC
Xerrada gratuïta
Abstract
Two-dimensional (2D) materials have outstanding physical, chemical and thermal properties that make them attractive for the fabrication of solid-state micro/nano-electronic devices and circuits. However, synthesizing high-quality 2D materials at the wafer scale is difficult, and integrating them in silicon microchips brings associated multiple challenges. Nevertheless, in the past few years substantial progress has been achieved and leading companies like TSMC, Intel and Samsung have started to work in this direction too. In this talk I will discuss how to integrate 2D materials in micro/nano-electronic devices, circuits, and microchips, giving a general overview of the global progress achieved in the field and presenting our last developments in hybrid 2D/CMOS applications. I will put special emphasis on devices and circuits for memristive technologies, including data storage, computation, encryption, and communication. I will also discuss the main technological challenges to face in the next years and provide some recommendations on how to solve them.
Bio
Mario Lanza is an Associate Professor of Materials Science and Engineering at the National University of Singapore, since August 2024. He got the PhD in Electronic Engineering in 2010 at the Autonomous University of Barcelona
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